2021 ANNUAL REPORT | Bar-Ilan Institute of Nanotechnology & Advanced Materials

85 magnetic memory with extremely large number of states per cell (e.g., 256 states when N=4), be used for neuromorphic computing, and more. The cover page of Applied Physics Letters presenting a picture of structures in the form of N magnetic crossing ellipse that support 22N discrete magnetic states. Publications 2020 and 2021 • Proloy T Das, H Nhalil, M Schultz, A Grosz, L Klein. “Measurements of nanomagnetic bead relaxation dynamics using planar Hall effect magnetometer”. Journal of Applied Physics, 2021. • Hariharan Nhalil, Proloy T Das, Moty Schultz, Shai Amrusi, Asaf Grosz, Lior Klein. “Thickness dependence of elliptical planar Hall effect magnetometers”. Applied Physics Letters, 2020. • Proloy Taran Das, Hariharan Nhalil, Moty Schultz, Shai Amrusi, Asaf Grosz, Lior Klein. “Detection of lowfrequency magnetic fields down to sub-pT resolution with planar-Hall effect sensors”. IEEE Sensors Letters, 2020. • Shubhankar Das, Ariel Zaig, Moty Schultz, Lior Klein. “Stabilization of exponential number of discrete remanent states with localized spin-orbit torques”. Applied Physics Letters, 2020. • S Das, A Zaig, M Schultz, S Cardoso, DC Leitao, L Klein. “A four-state magnetic tunnel junction switchable With spinorbit torques”. Applied Physics Letters 117 (7), 072404, 2020. • Julian Schütt,* Rico Illing, Oleksii Volkov, Tobias Kosub, Pablo Nicolas Granell, Hariharan Nhalil, ́Jürgen Fassbender, Lior Klein, Asaf Grosz, and Denys Makarov. “Two Orders of Magnitude Boost in the Detection Limit of DropletBased MicroMagnetofluidics with Planar Hall Effect Sensors”. American Chemical Society, 2020. Prof. Khaykovich Lev Department of Physics Member of BINA Nano-Photonics Center Research Areas • Laser cooling and trapping of atoms • Bose-Einstein condensation in dilute atomic gases; Fermi degenerate gas • Few-body physics; universal weakly bound states • Nonlinear matter-wave optics; matterwave solitons • External cavity semiconductor lasers Abstract Universal few-body physics at low temperatures Few-body physics is universal when inter-particle interactions are insensitive to the microscopic details of the shortrange interaction potentials and can be characterized by only one or few universal parameters. In the limit of zero collision energy the two-body interactions are determined by a single parameter, the s-wave scattering length a. Universality requires a to greatly exceed the two-body potential range. This can be achieved by a resonant enhancement of a, yielding the appearance of the peculiar quantum states known as quantum halos whose wavefunction acquires long-range properties and gives rise to loosely bound states of size ~a. In the case of three interacting bosons, universality means that the three-body observables show log-periodic behavior that depends only on the scattering length a and on a three-body parameter which serve as boundary conditions for the short-range physics. Such a behavior is associated with so called Efimov physics. In a series of theoretical papers Vitaly Efimov predicted and characterized an infinite set of weakly bound triatomic states (Efimov trimers) whose binding energies (in the limit of infinite a) are related in powers of the famous universal scaling factor ~1/515. Publications 2020 and 2021 • Yaakov Yudkin, Roy Elbaz, Lev Khaykovich. “Efimov Spectrum takes a Turn”. Bulletin of the American Physical Society, 2021. • Fatema Hamodi and Lev Khaykovich. “Extracting atoms one by one from a small matter-wave soliton”. J. Phys. B: At. Mol. Opt. Phys. 53 055301, 2020. Prof. Klein Lior Head of Physics Department Member of BINA Nano-Magnetism Center Research Areas • Magneto-transport in thin magnetic films (particularly ruthenates and manganites) • Anisotropic magnetoresistance and giant planar Hall effect • Current induced manipulation of domain walls • Macroscopic quantum tunneling • Transport properties of LAO/STO interfaces • Magnetic sensors and memory Abstract Multi-level magnetic memory Spintronics is a thriving branch of nanoelectronics which utilizes the spin of the electron and its associated magnetic moment in addition to the electron charge used in traditional electronics. A major practical contributions of spintronics is in magnetic non-volatile magnetic data storage which is based on magnetic tunnel junctions with two stable magnetic states corresponding to two memory states. We have shown that structures of magnetic thin films patterned in the form of N (=2,3 or 4) crossing ellipses support 22N discrete magnetic states. Furthermore, we have demonstrated switching between the states with spin currents and the ability of integrating such structures in magnetic tunnel junctions. The stabilization and control of exponential number of discrete magnetic states in relatively simple structures and the possibility of their integration in magnetic tunnel junctions constitute a major contribution to spintronics paving the way to multi-level

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